Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1999-12-29
2000-12-26
Smith, Matthew
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
29874, 29830, 29831, H01L 21302
Patent
active
061659118
ABSTRACT:
A metal layer is patterned by compression moulding using a stamp to create a thickness contrast pattern, followed by etching to transfer the thickness contrast pattern into the entire thickness of the metal layer. The stamp is typically patterned using a technique such as electron beam lithography, and the etchant typically etches through the entire metal layer. The method is used to produce structures such as microelectronic circuits.
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Rocchegiani Renzo
Smith Matthew
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