Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-05-01
2007-05-01
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S257000, C438S593000, C438S508000, C257S295000
Reexamination Certificate
active
10709999
ABSTRACT:
A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.
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Abraham David W.
Brown Stephen L.
Gaidis Michael C.
Gupta Arunava
Park Chanro
Infineon - Technologies AG
Neff Daryl K.
Pepper Margaret A.
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