Method of pattern layout of a photomask for pattern transfer

Details Method of pattern layout of a photomask for pattern transfer Method of pattern layout of a photomask for pattern transfer

2005-03-22

2005-03-22

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06869735

ABSTRACT:
In the layout of a photomask for pattern transfer, main patterns for transferring an image to a photosensitive film are positioned; auxiliary patterns, which do not substantially transfer an image to a photosensitive film are temporarily positioned; an auxiliary pattern is selected so an end partially overlaps an end of the main pattern and makes contact with the main pattern; and adjusting the position of the auxiliary pattern selected so that the end of the auxiliary pattern selected completely overlaps the end of the main pattern. Inspection of the photomask for mask defects is simplified while achieving an increase in resolution of a photomask for pattern transfer.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 6074787 (2000-06-01), Takeuchi
patent: 20030232253 (2003-12-01), Leroux et al.
patent: 6-236836 (1994-08-01), None
patent: 2001-100390 (2004-04-01), None

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