Method of passivating semiconductor surfaces

Details Method of passivating semiconductor surfaces Method of passivating semiconductor surfaces

1988-12-14

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG15, 148DIG65, 148DIG97, 156610, 357 52, 437 12, 437 96, 437133, 437976, 437980, H01L 21203, H01L 2120

Patent

active

049353845

ABSTRACT:
A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

REFERENCES:
patent: 3458369 (1969-07-01), Marinace
patent: 3862852 (1975-01-01), Kamins
patent: 4207586 (1980-06-01), Lebailly
patent: 4326330 (1982-04-01), LePage et al.
patent: 4504334 (1985-03-01), Schaake et al.
patent: 4525239 (1985-06-01), Wang
patent: 4548658 (1985-10-01), Cook
patent: 4561171 (1985-12-01), Schlosser
patent: 4578127 (1986-03-01), Gossard et al.
patent: 4593304 (1986-06-01), Slayman et al.
patent: 4665413 (1987-05-01), Calviello
patent: 4683163 (1987-07-01), Jarry et al.
patent: 4687922 (1987-08-01), Lemonier et al.
Olego, "Effects of ZnSe Epitaxial Growth on the Surface", Properties of GaAs, Appl. Phys. Lett., 51(18), pp. 1422-1424, (1987).

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