Method of passivating etched mirror facets of semiconductor lase

Details Method of passivating etched mirror facets of semiconductor lase Method of passivating etched mirror facets of semiconductor lase

1991-05-30

1993-01-05

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437225, 437235, 437946, 156625, H01L 3300, H01L 21316, H01L 21318, H01S 325

Patent

active

051770318

ABSTRACT:
A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability.
The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.

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Tamanuki et al., "Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process", Jap. J. Appl. Phys., vol. 30, No. 3, Mar. 1991, pp. 499-500.
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