Method of passivating and planarizing a metallization pattern

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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Details

156668, 204192E, 204192EC, C23C 1500, B29C 1708

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active

040897664

ABSTRACT:
Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.

REFERENCES:
patent: 4025411 (1977-05-01), Hom-Ma et al.
J. S. Lechaton "Depositing a Sputtered SiO.sub.2 Film Having Maximum Planarization," IBM Tech. Disc. Bull., vol. 17, pp. 2270-2271 (1975).
W. A. Edel et al. "Planarization of Metal Layers for Interconnections on Integrated Circuits," IBM Tech. Disc. Bull., vol. 14, pp. 3837-3838 (1972).

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