Method of passivating a semiconductor substrate

Details Method of passivating a semiconductor substrate Method of passivating a semiconductor substrate

1995-12-18

1999-06-01

Kight, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

438768, 438770, H61L 21465, H01L 2906, H01L 2990

Patent

active

059083166

ABSTRACT:
A method of passivating a semiconductor substrate includes singulating (13) a semiconductor substrate (23) from a semiconductor wafer, coupling (14) a heatsink (21) to the semiconductor substrate (23), etching (15) the semiconductor substrate (23) in a chamber of an etch tool, and passivating (17) the semiconductor substrate (23) with an oxide layer (31). The semiconductor substrate (23) is kept in the chamber of the etch tool from the etching (15) step through the passivating (17) step. The etching (15) of the semiconductor substrate (23) does not substantially etch the heatsink (21), and the passivating (17) of the semiconductor substrate (23) does not substantially passivate the heatsink (21).

REFERENCES:
patent: 3898141 (1975-08-01), Ermanis et al.
patent: 4373255 (1983-02-01), Goronkin
patent: 5405492 (1995-04-01), Moslehi

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