Method of passivating a semiconductor device with a multi-layer

Details Method of passivating a semiconductor device with a multi-layer Method of passivating a semiconductor device with a multi-layer

1981-03-27

1982-08-17

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

357 54, 427 93, 427 95, H01L 21316

Patent

active

043449859

ABSTRACT:
There is disclosed a method of forming a multi-layer passivant system including a layer of oxygen doped polycrystalline silicon over the semiconductor substrate. A layer of silicon dioxide is thermally grown over the oxygen doped polycrystalline silicon layer. If desired, layers of glass and an additional oxide layer can be formed over the thermally grown oxide.

REFERENCES:
patent: 3911168 (1975-10-01), Schinella et al.
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 3977019 (1976-08-01), Matsushita
patent: 4014037 (1977-03-01), Matsushita et al.
patent: 4063275 (1977-12-01), Matsushita et al.
patent: 4194934 (1980-03-01), Blaske
Abbas et al., "High Resistivity Poly-Oxide", IBM TDB, vol. 19, No. 11, Apr. 1977, p. 4154.
Doping Polysilicon Layer with Oxygen Neutralizes Device Surface Charges, Electronics International, Jun. 26, 1975, p. 53.

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