Method of passivating a semiconductor device utilizing dual poly

Details Method of passivating a semiconductor device utilizing dual poly Method of passivating a semiconductor device utilizing dual poly

1979-04-10

1980-03-25

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148187, 357 52, 357 54, 357 59, 427 85, 427 86, 427 93, 4272552, 4272557, H01L 21205, H01L 2904

Patent

active

041949340

ABSTRACT:
A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.
The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.

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patent: 4014037 (1977-03-01), Matsushita et al.
patent: 4080619 (1978-03-01), Suzuki
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