Method of passivating a semiconductor device by treatment with a

Details Method of passivating a semiconductor device by treatment with a Method of passivating a semiconductor device by treatment with a

1978-01-16

1978-09-12

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 13, 357 91, H01L 2126, H01L 21265

Patent

active

041135148

ABSTRACT:
A method of passivating a semiconductor device having at least one active component disposed therein comprises exposing the device to atomic hydrogen at a temperature lower than about 450.degree. C.

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patent: 4013485 (1977-03-01), Ma et al.
patent: 4056408 (1977-11-01), Bartko et al.
Appelbaum et al., "Hydrogen Chemisorption on Si . . .", Phys. Rev. Letts. 39, (1977), 1487.
Pankove et al., "Photoluminescence of Hydrogenated . . . Si", Appl. Phys. Letts. 31, (1977), 450.
Sakurai et al., "Hydrogen Chemisorption on . . . Si . . .", J. Vac. Sci. Techn. 13, (1976), 807.
Gorelkinskii et al., "Epr . . . in Si by H.sup.+ Implantation", Phys. Stat. Solid; k55, vol. 22(a), 1974.
Brodsky, "Making Higher Efficiency Solar Cells. . .", IBM - TDB, 18, (1975), 582.
Stein, "Bonding and . . . Implanted H in Si", J. Electron. Mat. 4, (1975), 159.
Ibach et al., "Hydrogen Adsorption . . . of Si", Surf. Science, 43 (1974), 481.
Ohmura et al., "Shallow Donor . . . in Si . . . by H.sup.+ . . .", Phys. Stat. Solid, 15a, (1973), 93.
Ohmura et al., "Electrical Properties of n-type Si . . .", Solid St. Comm. 11, (1972), 263.

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