Method of over-erase prevention in a non-volatile memory...

Details Method of over-erase prevention in a non-volatile memory... Method of over-erase prevention in a non-volatile memory...

2005-08-16

2005-08-16

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185280

Reexamination Certificate

active

06930928

ABSTRACT:
A method for enhancing erase of a non-volatile memory device in which the method prevents the over-erase of the memory device is disclosed. The disclosed method includes steps which are performed to precondition the memory device before a program or erase cycle is initiated. The method includes performing a step which includes a tunneling program, such as a Fowler-Nordheim (F-N) tunneling program, to increase the threshold voltage of the non-volatile memory device prior to performing the program/erase cycle. The disclosed method has particular applicability to a non-volatile memory device formed with an NROM device. The disclosed method attenuates or eliminates an over-erase condition in the non-volatile memory device. The related structure that is present in the preconditioning step is also disclosed.

REFERENCES:
patent: 6201737 (2001-03-01), Hollmer et al.
patent: 6445030 (2002-09-01), Wu et al.
patent: 6580643 (2003-06-01), Satoh et al.

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