Method of optimizing wells for PMOS and bipolar to yield an impr

Details Method of optimizing wells for PMOS and bipolar to yield an impr Method of optimizing wells for PMOS and bipolar to yield an impr

1993-02-19

1995-02-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 34, 437 59, 257370, H01L 21265

Patent

active

053936779

ABSTRACT:
A first process embodiment of the present invention comprises the steps of implanting a blanket low dose n-well implant before field oxidation. A blanket n-type punchthrough suppression implant precedes the field oxidation step. After field oxidation, an implantation masking step is used to adjust the doping for the p-well in its active and field regions.

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patent: 4847213 (1989-07-01), Pfiester
patent: 4889825 (1989-12-01), Parrillo
patent: 5006477 (1991-04-01), Farb
patent: 5023193 (1991-06-01), Manoliu et al.
patent: 5024961 (1991-01-01), Lee et al.

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