Method of optimizing exposure of photoresist by patterning as a

Details Method of optimizing exposure of photoresist by patterning as a Method of optimizing exposure of photoresist by patterning as a

1992-12-31

1994-04-19

Schilling, Richard L.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430327, 430328, 430330, 430394, 430494, 430942, G03F 702, G03F 720

Patent

active

053044410

ABSTRACT:
A method of adjusting exposure of an energy beam to a lithographic resist sensitive to the energy beam, which method comprises determining where in a pattern to be exposed the energy level will exceed a critical thermal level, and adjusting the pattern and kind of exposure of the resist where the critical level is exceeded. One technique is to adjust the level exposure of the resist to a lower level equal to or less than the critical level with repeated exposures of the pattern in areas where the critical level is exceeded. The energy level monitored can be a thermal level measured as a temperature of the resist. A second technique is to adjust the exposure level by modifying the pattern and duration of exposure of the resist to a longer duration providing exposures equal to or less than the critical level with the modified pattern of exposures of the pattern in areas where the critical level is exceeded.

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T. H. P. Chang, et al., "A Computer-Controlled Electron-Beam Machines for Microcircuit Fabrication" IEEE Transactions on Electron Devices, vol. ED-19, No. 5, May 1972, pp. 629-635.

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