Method of optical proximity correction

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430296, G03F 900

Patent

active

061209538

ABSTRACT:
A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

REFERENCES:
patent: 5879844 (1999-03-01), Yamamoto et al.

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