Optics: measuring and testing – By alignment in lateral direction – With light detector
Patent
1999-06-30
2000-05-16
Kim, Robert H.
Optics: measuring and testing
By alignment in lateral direction
With light detector
356401, G01N 1100
Patent
active
060644850
ABSTRACT:
A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.
REFERENCES:
patent: 5044750 (1991-09-01), Shamble
patent: 5805290 (1998-09-01), Ausschnitt et al.
Ku Yao-Ching
Lin Chin-Lung
Kim Robert H.
United Microelectronics Corp.
LandOfFree
Method of optical proximity correction does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of optical proximity correction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of optical proximity correction will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-263571