Method of operating nonvolatile memory device

Details Method of operating nonvolatile memory device Method of operating nonvolatile memory device

2011-07-26

2011-07-26

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185240, C365S185190

Reexamination Certificate

active

07986559

ABSTRACT:
A method of operating a nonvolatile memory device includes performing a first program operation and a first verification operation on memory cells until a cell, having a threshold voltage higher than a first reference voltage, occurs and, when a cell having the threshold voltage higher than the first reference voltage occurs, performing a second program operation and performing a second verification operation using a second reference voltage higher than the first reference voltage.

REFERENCES:
patent: 2005/0185470 (2005-08-01), Suzuki et al.
patent: 1020080038924 (2008-05-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Nov. 30, 2010.

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