Method of operating integrated circuit embedded with...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185180, C365S185080

Reexamination Certificate

active

07876615

ABSTRACT:
A programmable non-volatile device is operated with a floating gate that functions as a FET gate that overlaps a portion of a source/drain region and allows for variable coupling through geometry and/or biasing conditions. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. Multi-state embodiments are also possible. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

REFERENCES:
patent: 4412311 (1983-10-01), Miccoli et al.
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5586073 (1996-12-01), Hiura et al.
patent: 5712816 (1998-01-01), Capelletti et al.
patent: 6441443 (2002-08-01), Hsu et al.
patent: 6489202 (2002-12-01), Hsu et al.
patent: 6501685 (2002-12-01), Hsu et al.
patent: 6631087 (2003-10-01), Di Pede et al.
patent: 6678190 (2004-01-01), Yang et al.
patent: 6920067 (2005-07-01), Hsu et al.
patent: 2005/0023656 (2005-02-01), Leedy
patent: 2006/0057798 (2006-03-01), Komori et al.
patent: 2006/0067124 (2006-03-01), Lee et al.
patent: 2007/0047302 (2007-03-01), Lee et al.
patent: 2007/0194371 (2007-08-01), Benjamin
patent: 2007/0247902 (2007-10-01), Chen et al.
patent: 2007/0255893 (2007-11-01), Takeuchi
patent: 2008/0186772 (2008-08-01), Horch
patent: 2008/0225593 (2008-09-01), Mitros et al.
Clendenin, Mike; “Flash maker eMemory gaining foundry converts,” EE Times Asia, Nov. 6, 2003, 2 pages.
Clendenin, Mike; “eMemory extends OTP to 0.15 μm high voltage process,” EE Times Asia, Jul. 26, 2006, 1 page.
Datasheet, “Numonyx Embedded Flash Memory(J3vD),” Dec. 2007, 66 pages.
UMC, “Embedded Memory SoC Process Technology,” undated, 8 pages.
International Search Report and Written Opinion for PCT/US2008/82294, mailed Dec. 19, 2008, 8 pages.
International Search Report and Written Opinion for PCT/US2008/83697, mailed Jan. 9, 2009, 21 pages.
Non Final Office Action for U.S. Appl. No. 12/264,029 mailed May 27, 2010, 11 pages.
Non Final Office Action for U.S. Appl. No. 12/264,060 mailed May 28, 2010, 12 pages.
Non Final Office Action for U.S. Appl. No. 12/264,076 mailed Jun. 1, 2010, 10 pages.
Non Final Office Action for U.S. Appl. No. 12/271,695 mailed Jun. 11, 2010, 11 pages.

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