Coherent light generators – Particular active media – Semiconductor
Patent
1992-11-24
1994-06-28
Gonzalez, Frank
Coherent light generators
Particular active media
Semiconductor
372 23, 372 46, 359132, H01S 310
Patent
active
053253876
ABSTRACT:
A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.
REFERENCES:
patent: 4007978 (1977-02-01), Holton
patent: 4719634 (1988-01-01), Streifer et al.
patent: 5098804 (1992-03-01), Booth
patent: 5105433 (1992-04-01), Eisele et al.
patent: 5109444 (1992-04-01), Handa et al.
patent: 5214664 (1993-05-01), Paoli
Hildebrand et al., "The Integrated Interferometric Injection Laser (Y-Laser)": One Device Concept for Various System Applications, 17th European Conference on Optical Communication ECOC 1991, and 8th International Conference on Integrated Optics and Optical Fibre Communication IOOC 1991, pp. 39-46.
Shoji et al., "Fast Bistable Wavelength Switching Characteristics in Two-Electrode Distributed Feedback Laser" IEEE Photonics Technology Letters, vol. 2, No. 2, Feb. 1990, pp. 109-110.
Schilling et al., "Integrated Interferometric Injection Laser: Novel Fast and Broad-Band Tunable Monolithic Light Source," IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1616-1623.
Idler et al., "High Speed Integrated Interferometric Injection Laser with 22 nm Tuning Range," 16th European Conference on Optical Communication ECOC 1990, vol. 1, Regular Papers, pp. 479-482.
Henning et al., "Electrical Tuning of Semiconductor Interoferometric Laser," Electronics Letters, vol. 19, No. 22, Oct. 1983, pp. 926 and 929.
Electronics Letters, Feb. 15th, 1990, vol. 26, No. 4; "Widely Tunable Y-Coupled . . . ".
IEEE Photonics Technology Letters, vol. 2, No. 9, Sep. 1990; M. Kuznetsov: "Picosecond Switching Dynamics . . . ".
Appl. Phys. Lett. 39(10), Nov. 15th, 1981; W. T. Tsang: "Extremely Low Threshold . . . ".
Appl. Phys. Lett. 51(10), Mar. 7th, 1988; J. Salzman et al.: "Cross Coupled Cavity . . . ".
Baums Dieter
Hildebrand Olaf
Idler Wilfried
Laube Gert
Schilling Michael
ALCATEL N.V.
Gonzalez Frank
LandOfFree
Method of operating a semiconductor laser as a bistable opto-ele does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of operating a semiconductor laser as a bistable opto-ele, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of operating a semiconductor laser as a bistable opto-ele will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2382374