Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-04-10
2007-04-10
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230060, C365S194000, C365S189090
Reexamination Certificate
active
11005023
ABSTRACT:
A speed circuit path includes inverter chains that are controllable to operate in a slower, low sub-threshold leakage current mode or a faster, higher sub-threshold leakage current mode depending on an operating mode of the semiconductor device. A non-speed circuit path includes inverter chains that operate to reduce sub-threshold leakage current regardless of an operating mode of the semiconductor device.
REFERENCES:
patent: 5446700 (1995-08-01), Iwase
patent: 6100563 (2000-08-01), Arimoto
patent: 6232793 (2001-05-01), Arimoto et al.
patent: 6327211 (2001-12-01), Kai et al.
Bae Il-Man
Choi Jong-Hyun
Choi Seouk-Kyu
Kim Nam-Jong
LandOfFree
Method of operating a semiconductor device and the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of operating a semiconductor device and the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of operating a semiconductor device and the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3762784