Method of operating a semiconductor device and the...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S230060, C365S194000, C365S189090

Reexamination Certificate

active

11005023

ABSTRACT:
A speed circuit path includes inverter chains that are controllable to operate in a slower, low sub-threshold leakage current mode or a faster, higher sub-threshold leakage current mode depending on an operating mode of the semiconductor device. A non-speed circuit path includes inverter chains that operate to reduce sub-threshold leakage current regardless of an operating mode of the semiconductor device.

REFERENCES:
patent: 5446700 (1995-08-01), Iwase
patent: 6100563 (2000-08-01), Arimoto
patent: 6232793 (2001-05-01), Arimoto et al.
patent: 6327211 (2001-12-01), Kai et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of operating a semiconductor device and the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of operating a semiconductor device and the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of operating a semiconductor device and the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3762784

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.