Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-06-05
1998-09-08
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 33, 257 35, 257 36, 505193, H01L 2912, H01L 3922, H01L 3916
Patent
active
058048359
ABSTRACT:
This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.
REFERENCES:
patent: 5106823 (1992-04-01), Creuzet et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5407903 (1995-04-01), Nakamura
patent: 5468723 (1995-11-01), Nishino
Iwashita Setsuya
Kamikawa Taketomi
Natori Eiji
Shimoda Tatsuya
Jackson Jerome
Janofsky Eric B.
Seiko Epson Corporation
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