Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-12-28
2009-11-24
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07623375
ABSTRACT:
In a method of operating a flash memory device including a memory cell array having a Multi-Level Cell (MLC) for storing plural bit data, a first memory block included in the MLC is selected. First to Mthword lines are selected while increasing from a first column line to an Nthcolumn line, which are included in the first memory block. A lower page of each word line is selected in the order of the word lines. The first to Mthword lines are selected while increasing from the first column line to the Nthcolumn line. An upper page of each word line is selected in the order of the word lines.
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Kim You Sung
Son Ji Hye
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
Tran Michael T
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