Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-03-20
2007-03-20
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
C438S311000, C438S680000, C438S692000, C438S933000, C257SE21008, C257S017000, C257S168000, C257S182000
Reexamination Certificate
active
11053610
ABSTRACT:
A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2etch gas.
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Cotte John Michael
Hoivik Nils Deneke
Jahnes Christopher Vincent
International Business Machines - Corporation
Nhu David
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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