Method of obtaining high quality silicon dioxide passivation on

Details Method of obtaining high quality silicon dioxide passivation on Method of obtaining high quality silicon dioxide passivation on

1994-12-09

1997-05-13

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257626, 257632, 257645, 257651, H01L 310312

Patent

active

056295316

ABSTRACT:
A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer.

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6H-Silicon Carbide Transistors for High Temperature Operation, J. W. Palmour et al., Proceedings, First International High Temperature Electronics Conference, Jun. 16-20, 1991, pp. 511-518.
Dopant Redistribution During Thermal Oxidation of Monocrystalline Beta-SiC Thin Films, J. W. Palmour et al., Journal of Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 502-507.
Wet and Dry Oxidation of Single Crystal .beta.-SiC: Kinetics and Interface Characteristics, J. W. Palmour et al., Mat. Res. Soc. Symp. Proc., vol. 54, pp. 553-559, 1986.
SiC Electronics For High Temperture Control Systems, D. M. Brown et al., (4 pages), presented at GOMAC-91, Nov. 4-7, 1991, Orlando, FL.

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