Method of obtaining an impact ionization coefficient rate by jun

Details Method of obtaining an impact ionization coefficient rate by jun Method of obtaining an impact ionization coefficient rate by jun

1982-10-29

1985-11-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29584, 148171, 148175, 357 4, 357 16, H01L 2120

Patent

active

045533172

ABSTRACT:
In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition:

REFERENCES:
patent: 4103312 (1978-07-01), Chang et al.
patent: 4137542 (1979-01-01), Chang et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4250515 (1981-02-01), Esaki et al.
patent: 4257055 (1981-03-01), Hess et al.
patent: 4348686 (1982-09-01), Esaki et al.
Herbert Kroemer, "Heterostructure Devices: A Device Physicist Looks at Interfaces", Surface Science 132, (1983), pp. 543-576.
Harrison, W. A., "Elementary Theory of Heterojunctions", J. Vac. Sci. Technol., vol. 14, No. 4, Jul./Aug. 1977.
Sakaki, H., et al., "In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y Heterojunctions by Molecular Beam Epitaxy", Appl. Phys. Letts., vol. 31, No. 3, Aug. 1, 1977.
Tanoue, T., et al., "A New Method to Control Impact Ionization Rate Ratio, etc.", Appl. Phys. Letts., vol. 41, No. 1, Jul. 1, 1982.

Affiliated with

Also associated with

Rating

Method of obtaining an impact ionization coefficient rate by jun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of obtaining an impact ionization coefficient rate by jun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of obtaining an impact ionization coefficient rate by jun will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-77110