Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1992-11-13
1995-05-09
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
117 63, 117912, 117943, 423339, C30B 2918
Patent
active
054130670
ABSTRACT:
A method of obtaining a crystal by crystal growth in the liquid phase from a seed in the form of a plate taken from a primary crystal, which method comprises at least two steps constituted firstly by forming first crystal growth to obtain a secondary crystal from a first seed taken from said primary crystal in a first growth zone, and secondly in performing second crystal growth from a second seed taken from said secondary crystal in a second growth zone, said first and second seeds being selected so that few of the dislocations that they contain propagate respectively into the second zone of the secondary crystal or into the first growth zone of the resulting crystal. According to the invention said first and second crystal growth steps are performed in different growth directions. Application to monocrystals of quartz, or of materials that are isomorphs of quartz, such as berlinite, and that are intended for use in making electronic components, in particular oscillators and filters.
REFERENCES:
patent: 2456831 (1948-12-01), Kjellgren
patent: 2923605 (1960-02-01), Jaffe et al.
patent: 4000560 (1988-12-01), Gualtieri
patent: 4576808 (1986-03-01), Armington et al.
"The Influence of the Sector Location of the Seed on the Quality of a Synthetic Quartz Crystal"; Zarka et al.; J. of Cryst. Growth 54 (1981) pp. 394-398.
Arnaud Roger
Buisson Xavier
Capelle Bernard
Detaint Jacques
Philippot Etienne
Breneman R. Bruce
Centre National de la Recherche Scientifique "CNRS"
France Telecom
Garrett Felisa
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