Method of nitrogen doping of II-VI semiconductor compounds durin

Details Method of nitrogen doping of II-VI semiconductor compounds durin Method of nitrogen doping of II-VI semiconductor compounds durin

1993-07-14

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437247, 437106, 148DIG41, 148DIG64, H01L 2120

Patent

active

053547080

ABSTRACT:
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature.

REFERENCES:
patent: 5068204 (1991-11-01), Kukimoto et al.
patent: 5213998 (1993-05-01), Oiu et al.
patent: 5227328 (1993-07-01), Khan et al.
Park et al., "P-type ZnSe by Nitrogen Atom Beam Doping During Molecular Beam Epitaxial Growth", Appl. Phys. Lett. 57(20) No. 12, Nov. 1990, pp. 2127-2129.
S. Zhang and N. Kobayashi, Jpn. J. Appl. Phys., 31, L666 (Jun. 1992).
S. G. Fujita et al. Jpn. J. Appl. Phys., 26, L2000 (1987).
S. Z. Gujita et al. J. Cryst. Grow., 101, 48 (1990).

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