Method of nitridization of titanium thin films

Details Method of nitridization of titanium thin films Method of nitridization of titanium thin films

1995-12-06

1997-01-14

Kastler, Scott

Metal treatment

Process of modifying or maintaining internal physical...

Carburizing or nitriding using externally supplied carbon or...

148237, 437238, C23C 820

Patent

active

055935117

ABSTRACT:
Titanium films are nitrided at temperatures less than 650.degree. C., and preferably between 400.degree. C. and 500.degree. C., by treating the titanium film with a plasma formed from a nitriding gas at elevated temperatures. The plasma is created by subjecting the nitriding gas to RF energy, preferably an electrode having a frequency of 13.56 MHz or less. The reaction temperature can be reduced by lowering the plasma frequency to less than 500 KHz. This provides for nitridization at temperatures of 480.degree. C. and lower.

REFERENCES:
patent: 4138306 (1979-02-01), Niwa
patent: 4151325 (1979-04-01), Welch
patent: 4178877 (1979-12-01), Kudo
patent: 4282267 (1981-08-01), Kuyel
patent: 4352834 (1982-10-01), Taketoshi et al.
patent: 4365587 (1982-12-01), Hirose et al.
patent: 4366208 (1982-12-01), Akai et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4535000 (1985-08-01), Gordon
patent: 4557943 (1985-12-01), Rosler et al.
patent: 4657774 (1987-04-01), Satou et al.
patent: 4678679 (1987-07-01), Ovshinsky
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4702934 (1987-10-01), Ishihara et al.
patent: 4716048 (1987-12-01), Ishihara et al.
patent: 4717584 (1988-01-01), Aoki et al.
patent: 4717585 (1988-01-01), Ishihara et al.
patent: 4717586 (1988-01-01), Ishihara et al.
patent: 4718976 (1988-01-01), Fujimura
patent: 4726963 (1988-02-01), Ishihara et al.
patent: 4728528 (1988-03-01), Ishihara et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 4772486 (1988-09-01), Ishihara et al.
patent: 4774195 (1988-09-01), Beneking
patent: 4778692 (1988-10-01), Ishihara et al.
patent: 4784874 (1988-11-01), Ishihara et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4801468 (1989-01-01), Ishihara et al.
patent: 4803093 (1989-02-01), Ishihara et al.
patent: 4818560 (1989-04-01), Ishihara et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4844950 (1989-07-01), Saitoh et al.
patent: 4851302 (1989-07-01), Nakagawa et al.
patent: 4853251 (1989-08-01), Ishihara et al.
patent: 4869923 (1989-09-01), Yamazaki
patent: 4869924 (1989-09-01), Ito
patent: 4870030 (1989-09-01), Markunas et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4885067 (1989-12-01), Doty
patent: 4886683 (1989-12-01), Hoke et al.
patent: 4888062 (1989-12-01), Nakagawa et al.
patent: 4888088 (1989-12-01), Slomowitz
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4900694 (1990-02-01), Nakagawa
patent: 4908329 (1990-03-01), Kanai et al.
patent: 4908330 (1990-03-01), Arai et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4914052 (1990-04-01), Kanai
patent: 4926229 (1990-05-01), Nakagawa et al.
patent: 4927786 (1990-05-01), Nishida
patent: 4937094 (1990-06-01), Doehler et al.
patent: 4946514 (1990-08-01), Nakagawa et al.
patent: 4951602 (1990-08-01), Kanai
patent: 4954397 (1990-09-01), Amada et al.
patent: 4957772 (1990-09-01), Saitoh et al.
patent: 4959106 (1990-09-01), Nakagawa et al.
patent: 4971832 (1990-11-01), Arai et al.
patent: 4977106 (1990-12-01), Smith
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 4992305 (1991-02-01), Erbil
patent: 4992839 (1991-02-01), Shirai
patent: 4998503 (1991-03-01), Murakami et al.
patent: 5002617 (1991-03-01), Kanai et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5002793 (1991-03-01), Arai
patent: 5002796 (1991-03-01), Nishida
patent: 5006180 (1991-04-01), Kanai et al.
patent: 5007971 (1991-04-01), Kanai et al.
patent: 5008726 (1991-04-01), Nakagawa et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5018479 (1991-05-01), Markunas et al.
patent: 5024706 (1991-06-01), Kanai et al.
patent: 5028488 (1991-07-01), Nakagawa et al.
patent: 5030475 (1991-07-01), Ackermann et al.
patent: 5037666 (1991-08-01), Mori
patent: 5039354 (1991-08-01), Nakagawa et al.
patent: 5061511 (1991-10-01), Saitoh et al.
patent: 5073232 (1991-12-01), Ohmi et al.
patent: 5084412 (1992-01-01), Nagasaki
patent: 5085885 (1992-02-01), Foley et al.
patent: 5087542 (1992-02-01), Yamazaki et al.
patent: 5093149 (1992-03-01), Doehler et al.
patent: 5093150 (1992-03-01), Someno et al.
patent: 5093710 (1992-03-01), Higuchi
patent: 5100495 (1992-03-01), Ohmi et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5126169 (1992-06-01), Ishihara et al.
patent: 5130170 (1992-07-01), Kanai et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5141613 (1992-08-01), Adoncecchi et al.
patent: 5151296 (1992-09-01), Tokunaga
patent: 5154135 (1992-10-01), Ishihara
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5175017 (1992-12-01), Kobayashi et al.
patent: 5178904 (1993-01-01), Ishihara et al.
patent: 5178905 (1993-01-01), Kanai et al.
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5213997 (1993-05-01), Ishihara et al.
patent: 5220181 (1993-06-01), Kanai et al.
patent: 5268034 (1993-12-01), Vukelic
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5434110 (1995-07-01), Foster et al.
Wolf, Stanley, Ph.D. and Richard N. Tauber, Ph.D., Silicon Processing for the VLSI Era, vol. 1, Process Technology, Dec. 1986, Lattice Press, Senset Beach, CA, pp. 574-577.
Dec. 1987 Proceedings Fourth International IEEE VLSI Multilevel Interconnection Conference IEEE Catalog No. 87CH2488-5, Jun. 15-15, 1987 Santa Clara, CA.

Affiliated with

Also associated with

Rating

Method of nitridization of titanium thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of nitridization of titanium thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of nitridization of titanium thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1385178