Method of nitriding silicon

Details Method of nitriding silicon Method of nitriding silicon

1992-11-03

1994-09-06

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

264 65, 423406, 501 97, C01B 3300

Patent

active

053446348

ABSTRACT:
A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by (a) heating the silicon-containing material in an atmosphere containing at least hydrogen in the temperature range of about 0.degree. C. to about 1420.degree. C. and (b) thereafter, nitriding the silicon-containing material by heating the material in a nitriding atmosphere containing at least nitrogen gas in the temperature range of from about 1000.degree. C. to about 1450.degree. C.

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Molson, A. J. et al, "Removal of Surface Silica and the Effect Upon Silicon Nitridation Kinetics", J. Mat. Sci., vol. 16 (1981) pp. 2319-2321.

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