Method of nitriding silicon

Details Method of nitriding silicon Method of nitriding silicon

1979-07-02

1980-11-25

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423406, C01B 2106

Patent

active

042358574

ABSTRACT:
A method of manufacturing silicon nitride particles, either in an aglomerated or unaglomerated form, is disclosed. Basically, the particles to be nitrided are placed in an enclosed furnace and heated to a suitable temperature at which the enclosed furnace is filled with an initial gaseous mixture of nitrogen and hydrogen, the mixture containing not more than about 6% by volume hydrogen. Thereafter, the material is heated in the enclosed furnace to a temperature of about 900.degree. C. to about 1000.degree. C. at which time the nitrogen starts to react with the silicon in the furnace. Thereafter, the enclosed furnace is demand filled with a nitriding gas mixture consisting essentially of 1 to 10% by volume helium and about 99 to 90% by volume nitrogen. The furnace is heated to a suitable nitriding temperature and the demand filling of the chamber with the nitriding gas helium
itrogen combination is continued until the nitriding operation is terminated. The enclosed furnace is then cooled to room temperature and the nitrided silicon material recovered. The use of helium in the nitriding gas obtained all of the benefits one obtains when nitriding gas is a combination of hydrogen and nitrogen, but does not produce an explosive mixture.

REFERENCES:
patent: 3839541 (1974-10-01), Lumby et al.
patent: 3937792 (1976-02-01), Lumby
patent: 4022872 (1977-05-01), Carson et al.
"Handbook of Chemistry and Physics"-1976-1977-57th Ed., p. E-2.
Atkinson et al., "J. of Material Science", 10 (1975), p. 124-2.
Aktinson et al., "J. of the Amer. Ceram. Soc.", vol. 59, 1976.

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