Method of mounting a power semiconductor die on a substrate

Details Method of mounting a power semiconductor die on a substrate Method of mounting a power semiconductor die on a substrate

1998-09-28

2000-07-04

Niebling, John F.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

438119, H01L 2144, H01L 2148, H01L 2150

Patent

active

060837721

ABSTRACT:
A method of mounting a power semiconductor die on a substrate, a package for the die and a power supply including the package. The die has a first power terminal on a first surface thereof and a second power terminal on an opposing second surface thereof. The method including the steps of: (1) forming an electrically-conductive, mechanical bond between the first surface and a first location on the substrate, the mechanical bond electrically coupling the first power terminal to the substrate and (2) soldering an elongated electrically conductive strap to the second surface and a second location on the substrate, the conductive strap composed of a material having an electrical resistivity at most about 5.0.times.10.sup.-8 ohm-meters (.OMEGA.-m) and forming a low impedance path between the second power terminal and the second location.

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Disclosure entitled: "Interleaved Forward Converter Using Zero-Voltage Resonant Transition Switching for Distributed Power Processing".
Authors: c.P. Henze, D.S. Lo and J.H. Mulkern of Unisys Corporation: pp. 1-18 No Date.
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Authors: Wojciech A. Tabisz. Richard T. Gean and Fred C. Lee: pp. 21-30 No Date.

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