Method of MOS transistor manufacture

Details Method of MOS transistor manufacture Method of MOS transistor manufacture

1975-01-27

1976-07-13

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21265

Patent

active

039691500

ABSTRACT:
A metal-oxide-semiconductor (MOS) transistor structure includes gate, source and drain regions. Said structure also includes a gate electrode electrically connected and contiguous to either the source region or the drain region. Typically, the gate electrode is formed of a conductive material through which impurity diffusions may pass substantially unimpeded.

REFERENCES:
patent: 3514845 (1970-06-01), Legat et al.
patent: 3646665 (1972-03-01), Kim
patent: 3699646 (1972-10-01), Vadasz
patent: 3747203 (1973-07-01), Shannon
patent: 3750268 (1973-08-01), Wang

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