Method of MOS circuit fabrication

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148188, 357 23, 357 54, H01L 21225

Patent

active

040309525

ABSTRACT:
An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from selected portions of the underlying substrate, and formation of insulating material between the selected material and the underlying substrate on the surface of the newly exposed underlying substrate.

REFERENCES:
patent: 3604107 (1971-09-01), Fassett
patent: 3690969 (1972-09-01), Hays et al.
patent: 3825442 (1974-07-01), Moore
patent: 3912558 (1975-10-01), Luce et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of MOS circuit fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of MOS circuit fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of MOS circuit fabrication will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-734324

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.