Method of monitoring the machining by ion bombardment of a piezo

Details Method of monitoring the machining by ion bombardment of a piezo Method of monitoring the machining by ion bombardment of a piezo

1977-03-02

1978-05-30

Kaplan, G. L.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

Frequency of cyclic current or voltage

156643, 204298, 204192E, 219121EM, 324 57R, 324 71E, 324 71EB, C23C 1500, G01R 2922

Patent

active

040925889

ABSTRACT:
The present invention relates to the monitoring of the machining of a wafer of piezoelectric material by a beam of charged particles. The monitoring method is performed by measuring and displaying the complex voltage-current relationship produced by the electrical excitation of the wafer using a variable-frequency measuring signal applied to electrodes carried by the wafer.

REFERENCES:
patent: 3015950 (1962-01-01), Doctor et al.
patent: 3237447 (1966-03-01), McKeown
patent: 3253219 (1966-05-01), Littler
patent: 3664942 (1972-05-01), Havas et al.
R. L. Haven, "Deposition Rate Measurement" Western Electric Technical Digest No. 5, Jan. 1967, p. 37.
D. Beecham, "Sputter Machining of Piezoelectric Transducers," J. Appl. Phys., vol. 40, pp. 4357-4361 (1969).
L. Maissel et al, "Handbook of Thin-Film Technology," McGraw-Hill Book Co., N. Y., 1970, pp. 1-97 to 1-120.

Affiliated with

Also associated with

Rating

Method of monitoring the machining by ion bombardment of a piezo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of monitoring the machining by ion bombardment of a piezo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of monitoring the machining by ion bombardment of a piezo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-471562