Method of monitoring ion contamination in integrated circuits

Details Method of monitoring ion contamination in integrated circuits Method of monitoring ion contamination in integrated circuits

1997-12-22

2000-02-15

Ballato, Josie

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324 711, 324765, G01R 3126

Patent

active

060257342

ABSTRACT:
A method of monitoring ion contamination in integrated circuits is disclosed. The method makes use of the electric field induced by bias voltages and the heating circuit provided in the integrated circuit to raise temperature in order to drive mobile ions into or out of the gate oxide layer of a MOS transistor. Then, the threshold voltages of the MOS transistor under different ion contamination are measured respectively. The ion contamination induced whether in front-end process or back-end process can be detected properly.

REFERENCES:
patent: 4950977 (1990-08-01), Garcia et al.
patent: 4963500 (1990-10-01), Cogan et al.
patent: 4978915 (1990-12-01), Andrews, Jr. et al.
patent: 5498974 (1996-03-01), Verkuil et al.

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