Method of monitoring ion beam current in ion implantation appara

Details Method of monitoring ion beam current in ion implantation appara Method of monitoring ion beam current in ion implantation appara

1992-10-07

1994-06-07

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, H01J 37317

Patent

active

053192125

ABSTRACT:
In ion implantation apparatus, a pair of electrodes is positioned about the ion beam near the place where ions strike the target in which they are implanted. One electrode has a positive potential applied to it, and the electron current collected at this electrode is measured. The other electrode has a negative potential applied to it, and the positive ion current collected at this electrode is separately measured. The magnitude of the two currents are added together and used as a signal to compensate for reduction in beam current collected caused by charge exchange phenomena.

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patent: 4357536 (1982-11-01), Varma et al.
patent: 4539217 (1985-09-01), Farley
patent: 4717829 (1988-01-01), Turner
patent: 4849641 (1989-07-01), Berkowitz
patent: 5180918 (1993-01-01), Isobe

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