Method of monitoring introduction on interfacial species

Details Method of monitoring introduction on interfacial species Method of monitoring introduction on interfacial species

2005-08-16

2005-08-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S015000, C438S016000, C438S018000, C438S216000, C438S287000, C438S762000, C438S775000

Reexamination Certificate

active

06929964

ABSTRACT:
A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

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