Method of modulating threshold voltage of a mask ROM

Details Method of modulating threshold voltage of a mask ROM Method of modulating threshold voltage of a mask ROM

2005-02-15

2005-02-15

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Read only systems

Semiconductive

C365S102000

Reexamination Certificate

active

06856533

ABSTRACT:
A method of modulating a threshold voltage of a mask read-only memory, including providing a substrate, providing a source region in the substrate, providing a drain region in the substrate, defining a channel region between the source and drain regions, providing a gate dielectric layer over the substrate, the source region, the drain region and the channel region, providing a gate over the gate dielectric layer, and providing a parasitic capacitor between the gate and the substrate to modulate the threshold voltage of the mask read-only memory, wherein the threshold voltage is inversely proportional to a value of the parasitic capacitor.

REFERENCES:
patent: 5892714 (1999-04-01), Choi

Affiliated with

Also associated with

Rating

Method of modulating threshold voltage of a mask ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of modulating threshold voltage of a mask ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of modulating threshold voltage of a mask ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3466047