Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1978-09-06
1979-07-31
Dixon, Harold A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
29599, 250310, A61K 2702
Patent
active
041631560
ABSTRACT:
A fabrication technique for adjusting the performance characteristics of a Josephson junction device which can be applied quickly and reliably to a large number of individual junctions, preferably using techniques adaptable to automation, is disclosed. It has been discovered that an electron beam similar to that available in electron beam processing equipment, for example, an electron microscope, can be operated in such a way as to controllably modify the electrical characteristics of a Josephson junction in a fraction of a second. Irradiation of a junction is carried out in such a way that heating of the junction to any substantial degree does not occur while the performance characteristics of a device is being modified. The fabrication conditions are well defined. To obtain modification of device characteristics, the junction thereof is subjected to an electron beam with relatively high accelerating voltage, i.e., in excess of 10 kV, and a certain radiation dosage, i.e., in the order of magnitude of 1 A sec/cm.sup.2. The modification process is very local in effect and is a function of time thus enabling feedback control by measuring the characteristic during modification. In a preferred embodiment, the same electron beam by which the resistance of a device is being modified is used to measure the device resistance. Feedback, based on the measured resistance, controls the application of the electron beam to the device.
REFERENCES:
patent: 3600281 (1971-08-01), Bergmann
patent: 3691539 (1972-09-01), Erben et al.
patent: 3829961 (1974-08-01), Bauerlein et al.
Daetwyler Kurt
Jaggi Rudolf
Dixon Harold A.
International Business Machines - Corporation
Kilgannon, Jr. Thomas J.
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