Method of modeling and producing an integrated circuit...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Circuit simulation

Reexamination Certificate

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Reexamination Certificate

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07996202

ABSTRACT:
A system is provided for modeling an integrated circuit including at least one insulated-gate field-effect transistor. The system includes generator means for defining a parameter representing mechanical stresses applied to the active area of the transistor, and processing means for determining at least one of the electrical parameters of the transistor based at least partially on the stress parameter. Also provided is a method of modeling an integrated circuit including at least one insulated-gate field-effect transistor, and a method of producing an integrated circuit including at least one insulated-gate field-effect transistor.

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Preliminary Search Report dated Sep. 5, 2002 for Frech Patent No. 0200217.

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