Method of micromachining an integrated sensor on the surface of

Details Method of micromachining an integrated sensor on the surface of Method of micromachining an integrated sensor on the surface of

1993-05-10

1995-06-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437901, 437927, 1566441, H01L 213065

Patent

active

054279755

ABSTRACT:
A method for micromachining the surface of a silicon substrate which encompasses a minimal number of processing steps. The method involves a preferential etching process in which a chlorine plasma etch is capable of laterally etching an N+ buried layer beneath the surface of the bulk substrate. Such a method is particularly suitable for forming sensing devices which include a small micromachined element, such as a bridge, cantilevered beam, membrane, suspended mass or capacitive element, which is supported over a cavity formed in a bulk silicon substrate. The method also permits the formation of such sensing devices on the same substrate as their controlling integrated circuits. This invention also provides novel methods by which such structures can be improved, such as through optimizing the dimensional characteristics of the micromachined element or by encapsulating the micromachined element.

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patent: 4888300 (1989-12-01), Burton
patent: 4925805 (1990-05-01), van Ommen et al.
Z. Zhang, N. McDonald, "An RIE Process for Submicron Silicon Electromechanical Structures," Digest IEEE Int. Conf. on Solid St. Sensor and Actuators, pp. 520-523 (1991).
Editor, "Analog Devices Combines Micromachining and BiCMOS", Semiconductor International, Oct., p. 17 (1991).
Crazzolara et al., "Profile Control Possibilities for a Trench Etch Process Based on Chlorine Chemistry," J. Electrochem. Soc., vol. 137, No. 2, pp. 708-712 (Feb. 1990).
Powell et al., "Deep Si Trench Etching with a High Rate Process Through a n
+/p Type Structure, Using a Triode Configured Reactor," The Electrochemical Society, Abstract No. 174, pp. 252-253 (1989).

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