Method of metallizing sintered ceramics

Details Method of metallizing sintered ceramics Method of metallizing sintered ceramics

1982-06-17

1983-10-11

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

427 34, 427255, C23C 1500

Patent

active

044090790

ABSTRACT:
A method of metallizing ceramics in which, on a desired surface of a ceramic containing a silicon compound, a manganese-containing metal layer substantially free from any minute gaps with respect to the surface of the ceramics is formed, whereupon the resultant structure is heated to a temperature lower than the melting point of manganese to cause the reaction between manganese atoms and the silicon compound.
As a method for forming the metal layer, there is a method wherein a deposited film is formed by vacuum-evaporating or sputtering manganese metal or a manganese alloy or a method wherein a melt of a manganese-copper, manganese-nickel or manganese-titanium alloy is formed on the surface of the ceramic under the application of a pressure. The metallizing method can be conducted at a lower temperature and in a shorter period of time compared with a conventional metallizing method.

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patent: 4035526 (1977-07-01), Konantz et al.
patent: 4146656 (1979-03-01), Kinugawa et al.
patent: 4180596 (1979-12-01), Crowder
patent: 4331703 (1982-05-01), Lindmayer
patent: 4342632 (1982-08-01), Heim et al.

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