Method of metallizing contact holes in a semiconductor device

Details Method of metallizing contact holes in a semiconductor device Method of metallizing contact holes in a semiconductor device

1992-02-10

1993-03-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437195, 437230, 427 98, H01L 21288

Patent

active

051983893

ABSTRACT:
A TiW layer (14 and 14') between a nickel plug (16 and 16') and a silicon substrate (1) of a semiconductor device precludes the formation of nickel silicides. The nickel plugs are formed by means of an electroless nickel bath to which stabilizers are added which ensure that the contact holes (13 and 13') are filled with nickel right up to the edge.

REFERENCES:
patent: 4268536 (1981-05-01), Beckenbaugh et al.
patent: 4293591 (1981-10-01), Feldstein
patent: 4804559 (1989-02-01), Ushio et al.
patent: 5063169 (1991-11-01), De Bruin et al.
patent: 5112448 (1992-05-01), Chakravosty
Ting, C.H., et al., "Selective Electroless Metal Deposition . . . ", J. Electrochem. Soc., vol. 136, No. 2, Feb. 1989, pp. 462-466.

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