Method of metal filled trench buried contacts

Details Method of metal filled trench buried contacts Method of metal filled trench buried contacts

1990-09-04

1993-05-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 31, 437245, H01L 2144, H01L 2148

Patent

active

052139999

ABSTRACT:
A trench capacitor within an integrated circuit is provided which is filled with solid elemental metal. This metal-filled trench capacitor is formed by the following steps. First a trench is conventionally formed within a silicon substrate. A dielectric film is then blanket deposited onto the substrate and within the trench, so that the walls and bottom surface of the trench are completely covered. A metal-containing liquid solution is next deposited within the trench, and heated to a temperature sufficient to thermally decompose the metal compound within the liquid solution and drive off any solvent from the solution, thereby leaving a plate of elemental metal within the trench capacitor. The metal-filled capacitor is accordingly characterized by high electrical conductivity. The method may also be utilized to form a metal contact to a buried layer within an integrated circuit; a rectifying contact or Schottky diode; contacts to the substrate; metal diffusion barrier layer; and interconnection metallization.

REFERENCES:
patent: 3887993 (1975-07-01), Okada et al.
patent: 4562640 (1986-01-01), Widmann et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4672740 (1987-06-01), Shinai et al.
patent: 4720908 (1988-01-01), Wills
patent: 4764484 (1988-08-01), Mo
patent: 4851369 (1989-07-01), Ellwanger et al.
"Formulated Metallo-Organics", Engelhard Corporation, 1986.

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