Semiconductor device manufacturing: process – Direct application of electrical current
Reexamination Certificate
2011-03-29
2011-03-29
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Direct application of electrical current
C438S931000
Reexamination Certificate
active
07915143
ABSTRACT:
A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.
REFERENCES:
patent: 7427326 (2008-09-01), Sumakeris et al.
Caldwell Joshua D.
Glembocki Orest J
Hobart Karl D
Stahlbush Robert E
Tadjer Marko J
Geyer Scott B
Koshy Suresh
Nikmanesh Seahvosh J
Ressing Amy L.
The United States of America as represented by the Secretary of
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