Method of mechanical polishing

Details Method of mechanical polishing Method of mechanical polishing

1997-09-04

2000-08-29

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

H01L 21465

Patent

active

061108316

ABSTRACT:
A method of manufacturing integrated circuits utilizing chemical mechanical polishing (CMP) is disclosed. A dielectric layer, illustratively, having a dopant, dye, etc. termed a "marker layer" is formed upon a wafer having partially fabricated integrated circuits thereon. An undoped, undyed layer is deposited upon the marker layer. The undoped or undyed layer is polished and the waste slurry is monitored until a signal indicating the exposure of the signal layer is obtained. Analysis of the signal provides an indication of when the CMP process should be terminated.

REFERENCES:
patent: 5321304 (1994-06-01), Rostoker
patent: 5668063 (1997-09-01), Fry et al.
patent: 5705435 (1998-01-01), Chen
patent: 5795495 (1998-08-01), Meikle
patent: 5833846 (1998-11-01), Tananbe et al.
patent: 5836805 (1998-11-01), Obeng

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