Method of measuring waviness in silicon wafers

Details Method of measuring waviness in silicon wafers Method of measuring waviness in silicon wafers

1999-03-05

2000-05-02

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 15, 438 16, 438 17, G01R 3126, H01L 2166

Patent

active

060571705

ABSTRACT:
A method and system of measuring waviness of a silicon wafer. A memory stores data representative of the shape of the wafer at a plurality of positions on the wafer and a processor processes the data to determine a waviness parameter. The processor defines an inspection surface as a function of the data and calculates deviations between the inspection surface and a first reference plane at a plurality of positions on the inspection surface. The processor further defines a plurality of localized sites on the wafer and calculates deviations between the inspection surface and a second reference plane at a plurality of positions on the inspection surface for each site. The second reference plane is a function of the calculated deviations between the inspection surface for each site and the first reference plane. The processor then defines a waviness parameter for each site as a maximum variance of the calculated deviations between the inspection surface and the second reference plane.

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patent: 5920398 (1999-07-01), Iwanaga et al.
ADE Corporation, UltraGage.TM. 9500 Operation Manual, Sep. 1, 1994, "Measurement Theory," pp. 3-10.

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