Method of measuring warpage of rear surface of substrate

Details Method of measuring warpage of rear surface of substrate Method of measuring warpage of rear surface of substrate

2008-12-22

2010-12-07

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

Reexamination Certificate

active

07846810

ABSTRACT:
A method of measuring warpage of a rear surface of a substrate includes a substrate detection step, a best fit plane calculation step, and a warpage calculation step. Further, the method of measuring warpage of a rear surface of a substrate can further includes after the substrate detection step and before the best fit plane calculation step: a noise removal step and an outer peripheral portion removal step; the outer peripheral portion removal step and a smoothing step; or the noise removal step, the outer peripheral portion removal step, and the smoothing step. Thereby, a method of measuring warpage of a rear surface with a high surface roughness of a substrate can be provided.

REFERENCES:
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Chinese Office Action, with English translation, issued in Chinese Patent Application No. 200710005974.9, mailed Jul. 17, 2009.
Edited by Yoshiaki Matsushita et al., “Superprecision Wafer Surface Control Technology,” 1st Edition, Feb. 28, 2000, pp. 258-264, pp. 272-278, Published by Science Forum Inc.
“Wafer Geometry Characteristics” XP-002428986, dated Jul. 24, 2004.
European Search Report dated Apr. 26, 2007.

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