Method of measuring warpage of rear surface of substrate

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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Reexamination Certificate

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07494892

ABSTRACT:
A method of measuring warpage of a rear surface of a substrate includes a substrate detection step, a best fit plane calculation step, and a warpage calculation step. Further, the method of measuring warpage of a rear surface of a substrate can further includes after the substrate detection step and before the best fit plane calculation step: a noise removal step and an outer peripheral portion removal step; the outer peripheral portion removal step and a smoothing step; or the noise removal step, the outer peripheral portion removal step, and the smoothing step. Thereby, a method of measuring warpage of a rear surface with a high surface roughness of a substrate can be provided.

REFERENCES:
patent: 6323952 (2001-11-01), Yomoto et al.
patent: 6731391 (2004-05-01), Kao et al.
patent: 2004/0090639 (2004-05-01), Kubo et al.
patent: 2007/0166945 (2007-07-01), Tanabe et al.
Edited by Yoshiaki Matsushita et al., “Superprecision Wafer Surface Contol Technology,” 1st Edition, Feb. 28, 2000, pp. 258-264, pp. 272-278, Published by Science Forum Inc.
“Wafer Geometry Characteristics” XP-002428986.
Search Report dated Apr. 26, 2007.

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