Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1996-08-16
1998-11-17
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
G01R 3126
Patent
active
058381643
ABSTRACT:
A method for accurately measuring the threshold voltage of a MOSFET device. A variable DC voltage is connected between the drain and the source, and the source and the substrate are grounded. The drain-to-source voltage is varied among a first predetermined number of levels in a first range that approaches zero volts. The value of one K parameter for each level of the drain-to-source voltage is obtained. A curve representing the K parameter versus drain-to-source voltage characteristic is plotted. The intercept of the curve with the K parameter axis, by linear extrapolation of the curve is obtained, the intercept represents the threshold voltage of the MOSFET device.
REFERENCES:
patent: 5495166 (1996-02-01), Alini et al.
S. Jain, "Measurement of Threshold Voltage and Channel Length of Submicron MOSFETs," IEEE Proceedings, vol. 135, Pt. l, No. 6, pp. 162-164, Dec. 1988.
Zhenhua Wang, "Direct, Fast, and Accurate Measurement of Vt and K of an MOS Transistor Using a Vt-Sift Circuit," IEEE Transactions on Instrumentation and Measurement, vol. 40, No. 6, pp. 951-955, Dec. 1991.
Colin C. McAndrew, et al, "MOSFET Effective Channel Length, Threshold Voltage, and Series Resistance Determination by Robust Optimization," IEEE Transactions on Electron Devices, vol. 39, No. 10, pp. 2298-2311, Oct. 1992.
Kobert Russell M.
Nguyen Vinh P.
United Microelectronics Corporation
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