Method of measuring temperature of tunnel magnetoresistive...

Thermal measuring and testing – Temperature measurement – By electrical or magnetic heat sensor

Reexamination Certificate

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C374S178000, C324S760020, C324S252000, C428S811000, C029S603090, C360S313000

Reexamination Certificate

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07815369

ABSTRACT:
A method of measuring temperature of a TMR element includes a step of obtaining in advance a temperature coefficient of element resistance of a discrete TMR element that is not mounted on an apparatus, by measuring temperature versus element resistance value characteristic of the discrete TMR element in a state that a breakdown voltage is intentionally applied to the discrete TMR element and a tunnel barrier layer of the discrete TMR element is brought into a stable conductive state, a step of bringing a tunnel barrier layer of a TMR element actually mounted on the apparatus into a stable conductive state by intentionally applying the breakdown voltage to the mounted TMR element having the same structure as that of the discrete TMR element whose temperature coefficient has been measured, a step of measuring an element resistance value of the mounted TMR element with the tunnel barrier layer that has been brought into a stable conductive state, and a step of obtaining a temperature corresponding to the measured element resistance value from the previously measured temperature coefficient of element resistance.

REFERENCES:
patent: 6529353 (2003-03-01), Shimazawa
patent: 7317597 (2008-01-01), Naka
patent: 7369376 (2008-05-01), Guo et al.
patent: 7417442 (2008-08-01), Hachisuka et al.
patent: 7635654 (2009-12-01), Sun et al.
patent: 7667456 (2010-02-01), Naka
patent: 2009/0289626 (2009-11-01), Iben
patent: 2009/0323228 (2009-12-01), Carey et al.
patent: A 2004-185676 (2004-07-01), None
patent: A 2005-158195 (2005-06-01), None
patent: A 2006-134905 (2006-05-01), None

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